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2 edition of Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS found in the catalog.

Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS

Donald W. Schulte

Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS

by Donald W. Schulte

  • 155 Want to read
  • 13 Currently reading

Published .
Written in English

    Subjects:
  • Modulation-doped field-effect transistors.,
  • Gallium arsenide semiconductors.

  • Edition Notes

    Statementby Donald W. Schulte.
    The Physical Object
    Pagination57 leaves, bound :
    Number of Pages57
    ID Numbers
    Open LibraryOL15192029M

    Charge Collection Mechanisms in GaAs MOSFETs Article in IEEE Transactions on Nuclear Science 62(6) December with 9 Reads How we measure 'reads'. FABRICATION OF GaAs DEVICES by Albert G. Baca and Carol I. H. Ashby Sandia National Laboratories Albuquerque, NM, USA. CONTENTS Acknowledgment xiii Abbreviations xv 1 Introduction to GaAs devices 1 Scope of this book 1 GaAs materials 2 Types of GaAs devices 4 Electronic devices 4 Fabrication and testing of ohmic.

    High quality pseudomorphic AlGaAs/GaAs heterostructure was grown on an semi-insulating GaAs() substrate by Molecular Beam Epitaxy(MBE). Analysis of this structure was done by Photoluminescence (PL), HALL and High Resolution X-Ray. High‐quality pseudomorphic GaAs/In Ga As single quantum wells (QW’s) were prepared by atmospheric‐pressure organometallic chemical vapor deposition. Photoluminesence spectra measured at and 78 K exhibit intense, sharp peaks [full width at half‐maximum (FWHM)= meV for a 17‐Å well at 78 K] from the quantized energy transitions of the QW’s.

    The growth of modulation-doped heterojunction-field effect transistor structures with a pseudomorphic InGaAs quantum well for high frequency device applications is reported. The In-concentrations are varied between 10% and 30%. The quantum well widths range from 8 nm to 16 nm. Depending on the sheet concentration one or two strong photoluminescence transitions with a high-energy cutoff are. Growth of p-type GaAs∕AlGaAs() quantum well infrared photodetector using solid source molecular-beam epitaxy.


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Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS by Donald W. Schulte Download PDF EPUB FB2

This thesis reports on the growth and characterization of p-type pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor (MODFET) structures. A series of different p-type MODFET structures were grown with a systematic variation of the indium mole fraction and quantum well width of the InGaAs channel : Donald W.

Schulte. Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS. Abstract.

Graduation date: This thesis reports on the growth and characterization of p-type\ud pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor\ud (MODFET) structures.

A series of different p-type MODFET structures were. We use reflection high‐energy electron diffraction (RHEED) oscillations to study the growth condition dependence of the growth of pseudomorphic InGaAs layers on GaAs, as well as van der Pauw/Hall measurements to evaluate the growth parameter dependence of the electrical properties of InGaAs/AlGaAs high electron mobility transistor structures.

We present our conclusions regarding growth Cited by: Abstract. The growth kinetics of chemical beam epitaxy (CBE) were investigated with the growth of GaAs, AIGaAs, InP, and InGaAs.

Results obtained with epilayers grown by using trimethylarsine (TMAs) and triethylphosphine (TEP) instead of arsine (AsH3) and phosphine (PH 3) were reviewed with some additional CBE grown epilayers have similar optical quality to those grown by molecular Cited by: Abstract: MODFETs have been fabricated using heterojunctions consisting of AlGaAs and pseudomorphic InGaAs, grown on GaAs substrates.

The large conduction band discontinuity (about eV for 25% In and Al concentration) leads to a 2-D electron density as high as *10/sup 12/ cm/sup -2/, with electron mobilities of and cm/sup 2//V-s at and 77 K, by: Secondary‐ion mass spectrometry has been used to analyze the Al and In depth profiles in pseudomorphic GaAs/InGaAs/AlGaAs modulation‐doped field‐effect transistor structures.

Surface segregation of In was found on the upper interface of the strained InGaAs layer under a moderate growth temperature of °C. The segregation effect was found to be suppressed when the As 4. We studied the influence of the indium composition y, growth temperature T s and InGaAs quantum‐well channel thickness d ch on the and 77 K Hall electrical properties of pseudomorphic modulation doped field effect transistor (MODFET)‐type heterostructures grown by molecular‐beam epitaxy.

In agreement with Nguyen et al., we find an optimum channel thickness of 90 Å for an indium. ELSEVIER., o, CRYSTAL GROWTH Journal of Crystal Growth () Growth conditions and device performance of InGaAs/AlGaAs pseudomorphic inverted high electron mobility transistor T.

Kawaguchi *, M. Sato, H.I. Fujishiro, S. Nishi Research and Development Group, Oki Electric Industry Co., Ltd., Electronic Components Group, TokyoJapan Abstract Higashiasakawa. thickness of Å between the AlGaAs donor layer and GaAs channel of a HEMT to separate the negative charged 2-DEG from the ionized dopant atoms.

Pseudomorphic Channel: GaAs-based pseudomorphic HEMT differs from the conventional AlGaAs/GaAs HEMT in that a thin (typically Å) layer of In x Ga 1-x As(x=).

A GHz bandwidth pseudomorphic GaAs/InGaAs/AlGaAs MODFET-based OEIC receiver Abstract: High-performance quarter-micrometer pseudomorphic modulation-doped field-effect transistors (MODFETs) and a metal-semiconductor-metal (MSM) photodetector have been used in the design of a mu m wavelength sensitive high-speed OEIC (optoelectronic.

The growth of InGaAs/GaAs/AlGaAs laser structures by MOCVD at low pressures on Si() substrates with a Ge epitaxial metamorphic buffer layer of various thicknesses is studied. The results of the influence of the growth temperature and incorporation of additional AlAs layers at the boundary with the Ge/Si() substrate on the crystalline and optical quality of the formed III–V structures.

The band gaps of eV and eV are deduced for GaAs and InGaAs from Fig. 8 data. These values are in good agreement with the data reported for samples of GaAs and InGaAs grown by different methods.

The change of optical band gap to higher wavelength in semiconductors is associated with the high degree of doping known as band gap. Keywords: AlGaAs/InGaAs/GaAs pHEMTs, 3D MMICs, multilayer fabrication, characterisation, performance comparison (Some figures may appear in colour only in the online journal) 1.

Introduction Vertical-oriented monolithic microwave integrated circuits (MMICs) technology has been popularized to meet the requirements of the current market demands. A 35 nm thick n + AlGaAs (1 × 10 17 cm −3) layer was grown on an intrinsic AlGaAs spacer layer as a Schottky layer, which improves parallel conduction at high voltage.

Finally, a 45 nm n +-GaAs cap layer was grown to improve the resistivities of the ohmic contacts. For device fabrication, the devices were processed by optical stepper.

We studied the influence of the indium composition y, growth temperature T(s) and InGaAs quantum-well channel thickness d(ch) on the and 77 K Hall electrical properties of pseudomorphic modulation doped field effect transistor (MODFET)-type heterostructures grown by molecular-beam epitaxy.

In agreement with Nguyen et al., we find an optimum channel thickness of 90 angstrom for an. GaAs Growth AlGaAs Growth Fig1. Schematic illustration of the growth process of GaAs nanowires and GaAs/AlGaAs core-shell nanowires.

NSTI-Nanotech. consuming growth of a huge number of test samples is not necessary. CONCLUSION Support of modelling to speed-up setting appropriate process conditions for the growth of InGaAs/(Al)GaAs epitaxial laser structures on 4 inch substrates in a production system has been demonstrated to.

Highly efficient ridge waveguide pseudomorphic single quantum well lasers, emitting at nm, have been fabricated from an In Ga As/GaAs/AlGaAs graded-index separate confinement heterostructure grown by molecular beam epitaxy. The lateral index guiding provided by the ridge reduces the anomalously large lateral loss of optical power found in gain-guided structures, thereby.

The long-term drain current drift of the GaAs MOSFET is \% during operation for a period of over h. Wu et al. [] used the liquid phase chemical enhanced oxidation (LPCEO) method near. Growth, Fabrication and Testing of Pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS.

Introduction The rapid advancement of semiconductor technology and ever greater complexity of semiconductor devices have placed increasing demands upon the materials used in their manufacture.

These increased demands have driven the. We report the growth and fabrication of pseudomorphic InGaP/InGaAs/GaAs doped-channel heterostructure field effect transistors (HFETs). A direct comparison between single and double barrier HFETs of otherwise nominally identical devices shows that the use of a double barrier structure reduces the output conductance and enhances both the current gain cutoff frequency fT and the.Abstract Disordering of GaAs/AlGaAs multiple quantum well asymmetric Fabry-Perot modulators (AFPM) was carried out using impurity free vacancy diffusion (IFVD), involving the deposition of a SiO 2 cap followed by rapid thermal annealing at °C.

Blue shifts of up to 52 meV, while maintaining clearly resolved heavy and light hole excitons, were achieved.DEVICE FABRICATION UNIFETs and conventional HEMTs were fabricated from the same GaAs/InGaAs/ AlGaAs pseudomorphic heterostructures grown by MBE.

The device fabrication was based on conventional mesa-isolated lift-o technology4: Deep-mesa, wet etching was used to fabricate arrays of parallel quantum wires of di erent widths (W L) and periods (P.